【摘要】 介绍了GaN薄膜材料的主要性质 ,制备工艺 ,掺杂 ,衬底和缓冲层等相关问题 ,并概述了GaN基器件的研究现状 ,提出了目前GaN研究中所面临的主要问题 .更多还原

【Abstract】 Recent studies on gallium nitride thin films were reviewed with focus on techniques mainly used in GaN thin films growth,doping,buffers and substrate materials.The electrical and optical properties of GaN and their potential applications were summarized and the recent reports of GaN-base device were also mentioned.Main problems in research of GaN materials were discussed.更多还原