【摘要】 该文研究了HgI2晶体表面状况对晶体电学性质的影响,主要探讨在不同的腐蚀条件下KI溶液腐蚀HgI2晶体时,得到不同的表面状况,从而对HgI2晶体电学性质产生的影响.扫描电镜(SEM)、X射线光电子能谱(XPS)及微电流计分析表明,通过化学腐蚀,在0℃时,用浓度为10%～20%KI溶液,腐蚀时间2min左右,可以得到较好的晶体表面状况.上述工艺条件,能够很大程度上优化HgI2晶体的电学参数,从而提高HgI2核探测器的性能.更多还原

【Abstract】 This paper studies the effects of surface conditions of HgI2 crystal on the electrical properties of the crystal. The investigation focuses the attention on KI solution corroding the surface of HgI2 crystal in different corrosion and on the effects of that. The tests and analysis by use of SEM (scan electrical microscope) and XPS show that the surface condition of HgI2 crystal can be improved when the temperature of KI solution is approximately 0 ℃, the concentration is 10%~20%, and the corrosion period is around 2 minutes. The technical process for treating surface of HgI2 crystals described above can optimize the electrical performance of HgI2 crystals, and thereby enhance the performance of HgI2 nuclear detector.更多还原