【摘要】 通过感应耦合等离子体(ICP)化学气相沉积方法并利用C4F8和H2的混合气体制备了氟化非晶碳氢(a C:F,H)薄膜.使用红外光谱仪分析了薄膜的结构.研究了金属Al/a C:F、H/SiMIS结构在不同环境光和不同频率下的电容 电压(C V)特性.红外结果表明,在800cm～1800cm-1和2700～3100cm-1的波数范围内,薄膜存在大量的C——C、C—F和C—H的振动结构.从薄膜的C V曲线的计算结果表明,薄膜当中的缺陷电荷约为1.07×1010cm-2,这些电荷主要局域在C——C双键周围 同时,由于界面陷阱电荷的存在,使得C V曲线随着测试频率的增加向负偏置方向偏移.更多还原

【Abstract】 Deposition of fluorinated amorphous hydrocarbon film (aC:F,H) is performed in an inductively coupled plasma chemical vapor deposition (ICPCVD) system,using C4F8/H2 as source gases.The characteristics of capacitancevoltage (CV) for aC:F,H film are studied . The bond configuration of the film is analyzed with FourierTransformed Infrared Spectroscopy (FTIR). The result from FTIR shows that there are large amounts of C--C, C-F and C-H bond structures in aC:F,H film. The trapped charge density about 1.07×1010cm-2 is calculated. Most of these charges, which are located around C--C bond, results in the reverse shift of CV curve with the increasing of the frequency.更多还原