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He~+注入诱生微孔对金吸除作用的研究
Study of Gettering Efficiency of Au to Voids Induced by He~+ Implantation
【摘要】 高注量的氦注入硅中并经热处理所形成的微孔,对金属原子的吸除作用已为大量的研究所证实.作者报道了该技术应用于平面二极管中对金杂质吸除的研究.其结果表明,在粗糙研磨表面上形成的氦诱生微孔,同样具有良好的吸除效果.
【Abstract】 Voids in silicon are induced by high injection capacity He+ implantation, ability of voids to getter metallic impurities has been investigated and observed. The authors present results of this experiment that using voids getter Au in planar diodes. Furthermore, the authors observe the high gettering efficiency of Au to void in ragged backside of diodes.
- 【文献出处】 四川大学学报(自然科学版) ,Journal of Sichuan University (Natural Science Edition) , 编辑部邮箱 ,2003年01期
- 【分类号】O647.3
- 【被引频次】1
- 【下载频次】19