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掺钯硅快恢复二极管VF~TRR兼容性研究
Study on VF~TRR Tradeoff of Palladium Doped Fast Recovery Silicon Diode
【摘要】 作者研究了掺Pd硅快恢复二极管的VF~TRR兼容性,得到掺钯硅二极管的VF~TRR兼容性略优于掺铂、掺金二极管的结果;这一结果与目前广泛采用的Baliga理论的预测不相符合,作者对此进行了分析与讨论.根据实验结果,作者认为应用掺钯技术有望制造出性能优良的超快恢复二极管.
【Abstract】 The authors studied the VF~TRR tradeoff of palladium doped fast recovery silicon diode, and got the result that the VF~TRR tradeoff of Pddoped diode was slightly superior to that of Ptdoped diode and Audoped diode. Though the result was not in accordance with the prediction of Baliga theory, the authors analyzed it. The use of the Pddoped technique in practice had potential value in research the better ultrafast recovery diode.
【关键词】 掺钯;
快恢复二极管;
VF~TRR兼容性;
反恢复时间;
反向漏电流;
【Key words】 palladium diffusion; fast recovery diode; VF~TRR tradeoff; reverse recovery time; reverse leakage current;
【Key words】 palladium diffusion; fast recovery diode; VF~TRR tradeoff; reverse recovery time; reverse leakage current;
【基金】 国家自然科学基金
- 【文献出处】 四川大学学报(自然科学版) ,Journal of Sichuan University (Natural Science Edition) , 编辑部邮箱 ,2003年01期
- 【分类号】TN312
- 【下载频次】86