【摘要】 具有金属 /绝缘层 /半导体 /金属结构的场助热电子发射阴极是大屏幕显示器中的主要候选部件。电子发射受到各层薄膜的厚度、材料组分和结晶状态等的严重影响。由Au/Ag双层薄膜构成的上电极使得电子亲和势降低0 .5 e V,发射电流提高了数倍。半导体材料 Zn1 - x Mgx O具有低的电子亲和势以及适合电子注入的带隙宽度 ,并且已经较为容易地用溅射方法制备。上电极和半导体层之间的晶格匹配可以降低电子在界面上的散射 ,对提高发射电流是很重要的 ,这已经在 Zn1 - x Mgx O/Au和 L i F/Au界面上实现。在绝缘层和半导体层之间引入界面态控制层可以大大降低驱动电压 ,对采用宽带隙半导体层的阴极尤其具有实用价值更多还原

【Abstract】 The field assisted hot electron emission cathode with a metal/insulator/semiconductor/metal structure is a main candidate for large screen displays. The thickness, and material composition and crystallization of each layer strongly influence the electron emission. In a cathode with a top electrode composed of an Au/Ag double layer, the effective affinity is reduced about 0.5 eV and the emission current is increased several times. The semiconductor material Zn 1- x Mg x O has low electron affinity, a suitable band gap for electron injection, and is easily prepared by sputtering. Crystal lattice matching between the top electrode and the semiconductor layer, which reduces electron scattering at the interface and enhances the emission current, was realized at the Zn 1-x Mg x O/Au and LiF/Au interfaces. An interface state controlling layer between the insulator and the semiconductor layers greatly reduces the driving voltage greatly, which is especially useful for cathodes having semiconductor layers with wide band gaps.更多还原