【摘要】 设计了一个与n阱工艺兼容的高精密CMOS带隙基准电压源电路。该电路实现了一阶PTAT温度补偿,并具有好的电源抑制比。SPICE模拟和测试结果表明,其电源抑制比可达到60dB,在20～70°C范围内精度可达到60ppm/°C。更多还原

【Abstract】 A high precision bandgap voltage reference circuit is presented in the paper, which is compatible with nwell CMOS technology The circuit fulfills the firstorder PTAT (Proportion To Absolute Temperature) temperature curvature compensation Results from HSPICE simulation and chip test show that the circuit has a power supply rejection ratio (PSRR) of 60 dB and an accuracy of 60 ppm/°C in the temperature range from 20 °C to 70 °C更多还原