【摘要】 基于0.5μm工艺,设计了一个工作频率在1.8GHz,相位噪声在偏移量为500kHz时小于-100dBc/Hz的压控振荡器(VCO)。并将一个普通的压控MOS变容管改进为只工作在反型区的压控MOS变容管。将这两种MOS电容分别应用到该VCO电路中。结果表明,采用反型模式压控MOS变容管的VCO电路具有更大的调谐范围,调谐曲线由之前的反复变化变为单调变化,并且对电路的相位噪声也起到了抑制作用。更多还原

【Abstract】 A 18 GHz voltage controlled oscillator (VCO) is designed based on 05μm CMOS technology, which yielded phase noise as low as -100 dBc/Hz at 500 kHz offset A conventional voltagecontrolled MOS varatctor is modified to an inversion voltagecontrolled MOS varactor The two types of varactors are used in the VCO, respectively Results from simulation show that larger tuning range, better phase noise and monotonic tuning curve can be obtained with the inversion MOS varactor更多还原