【摘要】 多孔硅被认为是RF应用领域中较有潜力的衬底材料。文章利用多孔硅作衬底,制备了微型微波共平面波导,采用多线方法计算出该波导在多孔硅上的插入损耗和有效介电常数;提出了通过多孔硅的相对介电常数来确定多孔度的方法。实验测试结果表明,在20μm多孔硅上的波导,其插入损耗在1～30GHz范围内为1～40dB/cm;而在70μm多孔硅上制备的波导,其插入损耗在整个测试频段内不超过7dB/cm。通过有效介电常数的计算,推算出实验制备的70μm多孔硅材料的多孔度约为65%。更多还原

【Abstract】 Miniature micromave coplanar waveguides were fabricated on porous silicon substrate The insert loss and the effective dielectric constant of these waveguides were calculated with multiline method And a method to determine the porosity through the relative dielectric constant of the porous silicon is presented in the paper It has been found that the insert loss of the waveguide on 20 μm porous silicon was between 1 and 40 dB/cm from 1 GHz to 30 GHz, while, for the waveguide on 70 μm porous silicon, the insert loss was below 7 dB/cm in the full measured frequency range And the porosity of 70 μm porous silicon in our experiment was about 65%, which was deduced from the relative dielectric constant of porous silicon更多还原