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用腔场中的二能级势阱离子实现量子逻辑门
Implementation of Quantum Logic Gates Using a Two-level Trapped Ion in Cavity QED
【摘要】 利用光腔中的势阱粒子同时与外激光场和腔场发生相互作用的特性,我们提出了一种量子逻辑门的实现方案。在该方案中,我们采用文献[10-12]中的模型。文献[11-12]中实现的逻辑门是以离子内态和运动态作为量子比特,腔态充当辅助比特在计算过程中保持在基态。而[10]要求离子内态保持为基态,利用离子运动态和腔态构成量子比特。与文献[10-12]不同的是,我们实现的量子逻辑门是以粒子内态和腔态作为比特,而势阱离子的运动态作为辅助比特始终保持在基态。而且,我们对该方案的实验要求进行了讨论。
【Abstract】 A trapped ion in a cavity can simultaneously interact with a laser field as well as the cavity field. Based on the point, we propose a new scheme to implement quantum logic gates such as single qubit rotation gate, two qubit controlled-phase gate and controlled-NOT gate. and scheme employs the model used in literature [10-12] and is different from these works because computation basis is composed by the internal ionic state and motional state. We also discussed the experimental requirement for our scheme.
【Key words】 Quantum computing; Quantum logic gate; Trapped ions; Decoherence;
- 【文献出处】 量子光学学报 ,Acta Sinica Quantum Optica , 编辑部邮箱 ,2003年04期
- 【分类号】O413.1
- 【被引频次】3
- 【下载频次】100