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大应变In_0.3Ga_0.7As/GaAs量子阱激光器的生长和研究

Growth and Study of High Strain In₀.3Ga₀.7As/GaAs Quantum Well Laser Diode Device

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【Author】 Pan Jiaoqing, Huang Baibiao, Zhang Xiaoyang, Ren Zhongxiang, Qin Xiaoyan, Zhu Baofu, Li Xianlin(State Key Laboratory of Crystal Materials, Shandong Univeristy, Jinan 250100 China ; Shandong Huaguang Optoelectronics Co. Ltd, Jinan 250010 China )

【机构】山东大学晶体材料国家重点实验室；山东华光光电子有限公司；山东大学晶体材料国家重点实验室济南 250100；济南 250100；济南 250010；济南 250100；

【摘要】金属有机物化学气相沉积(MOCVD)方法生长应变InGaAs/GaAs量子阱,应变缓冲层结合生长中断改善量子阱的PL谱特性.用该量子阱制备的激光器有很低的阈值电流密度(43 A/cm~2)和较高的斜率效率(0.34W/A,per facet)。更多还原

【Abstract】 Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance. The laser diodes using the QW have very low threshold current densities (43 A/cm2) and high slop efficience (0.34 W/A, per facet).更多还原