【摘要】 在n+-GaAs(n=1×1018cm-3)衬底上,用MOCVD方法制备了610 nm的AlGaInP发光二极管的外延片,用X射线双晶衍射和PL谱表征了ALGaInP外延片样品的性质,通过对减薄到不同厚度的LED外延片的管芯在相同条件下的退化实验,发现了亮度的退化随厚度的减小而减小的结果。由理论计算结果可以得到,衬底厚度的降低对于LED样品稳定性产生作用的主要因素是由于产生的耗散热的减小而使缺陷增殖速度减小和非辐射复合中心浓度的相应降低,同时衬底厚度的降低也有助于提高AlGaInP LED的器件的稳定性。更多还原

【Abstract】 The 610 nm AlGaInP LEDs was prepared by MOCVD on the n+-GaAs(n=1×1018 cm-3), the X-ray double crystal diffraction and spatial PL spectrum map was used to analyze the AlGalnP epitaxial layers. Through the degenerate experiment of diffent thickness AlGalnP LED in the same condition, we found that the degenerate of LED luminance diminishes with the decrease of the GaAs substrate thickness. With the calculated result, we can get that the main reason that the better reliability of LED luminance with the decrease of the GaAs substrate thickness is the decreased heat out form the thin substract, and the decrease of the GaAs substrate thickness can also help to improve the reliability of AlGalnP LED device.更多还原