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热处理单晶硅片中Fe玷污的深能级瞬态谱分析
DLTS Analysis on Iron Contamination of Heat-treated Silicon Wafers
【摘要】 应用深能级瞬态谱(DLTS)技术,对不同热处理条件下的单晶硅腐蚀片及抛光片进行了Fe玷污分析,系统研究了热处理前预清洗工艺和热处理工艺过程对硅片体内Fe玷污的影响。实验表明,热处理和热处理前预清洗是加工过程中对硅片体内Fe玷污有重大影响的工序,进而提出了有效降低硅片内Fe玷污的热处理控制方法。
【Abstract】 Iron contamination of both etched and polished silicon wafers treated with different heat-treating was analyzed byusing DLTS method. The influence of the heat-treating process as well as the pre-cleaning process before it on the iron impurityin silicon wafers was systematically investigated. It is found that the heat-treating process and the pre-cleaning process before itplays high role to the iron contamination in manufacturing crystal silicon wafers, and based on which, a control direction of theheat-treating process for effectively decreasing the iron contamination of silicon wafers is put forward.
- 【文献出处】 科学技术与工程 ,Science Technology and Engineer , 编辑部邮箱 ,2003年03期
- 【分类号】TN304.12
- 【被引频次】1
- 【下载频次】146