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变价元素铋掺杂钨酸铅晶体辐照损伤的研究

Study on Irradiation Damage of Bi-Doped PbWO4 Crystal

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【作者】 梁玲顾牡段勇马晓辉刘峰松吴湘惠邱隆清陈铭南廖晶莹沈定中张昕宫波薛炫萍徐炜新王景成

【Author】 LIANG Ling GU Mu 1) DUAN Yong MA Xiao-Hui LIU Feng-Song WU Xiang-Hui QIU Long-Qing CHEN Ming-Nan (Department of Physics,Tongji University,Shanghai 200092,China) LIAO Jing-Ying SHEN Ding-Zhong ZHANG Xin GONG Bo XUE Xuan-Ping (Laboratory of Functional Inorganic Materials,Chinese Academy of Sciences,Shanghai 200050,China) XU Wei-Xin WANG Jing-Cheng (Shanghai Key Laboratory of Metal-Functional Materials,Shanghai 200940,China)

【机构】 同济大学物理系中国科学院上海硅酸盐研究所上海金属功能材料重点实验室上海金属功能材料重点实验室 上海200092上海200092上海200050上海200940上海200940

【摘要】 采用剂量为 4Mrad的γ射线辐照Bridgman法生长的未掺杂和掺铋钨酸铅晶体 ,研究了辐照前后晶体的透射光谱、X射线激发发射光谱 (XSL)的变化 .利用正电子湮没寿命谱 (PAT)和X光电子能谱 (XPS)的实验手段 ,对钨酸铅晶体辐照前后的微观缺陷进行了研究 ,并对其抗辐照损伤性能及微观机理进行了初步探讨 .研究表明 ,铋掺杂使得晶体中的正电子捕获中心和低价氧浓度下降 ;辐照后 ,未掺杂晶体中正电子捕获中心浓度下降 ,低价氧浓度上升 ,掺铋晶体则出现了与之完全相反的情况 ,正电子捕获中心浓度上升 ,低价氧浓度下降 .提出掺铋钨酸铅晶体中铋的掺杂辐照前主要以Bi3+占据VPb的形式存在 ,辐照使变价元素铋发生Bi3+→Bi5+的变价行为 ,Bi5+可以替代W6+格位并使得晶体内部分 (WO4 ) 2 -根团形成 (BiO3+Vo) -.

【Abstract】 The luminescence and point defects of pure lead tungstate crystals (PbWO 4) and Bismuth (Bi) doping crystal (PbWO 4:Bi)grown by modified Bridgman method are studied. It is found that irradiation results in the great change of the transmission and X-ray excited emission after γ-ray irradiation about 4 Mrad dose. The defects in PbWO 4 crystal have been studied by means of positron annihilation lifetime and X-ray photoelectron spectra. The results show that Bi dopant suppresses the concentrations of positron capture centers and low-valent oxygen ions.After γ-ray irradiation,in the pure crystal the concentration of lead vacancy (V Pb) is decreased and that of low-valent oxygen increased; on the contrary,in Bi dopant crystal the concentrations of positron capture centers increased and that of low-valent oxygen ions suppressed. It is tentatively proposed that Bi 3+ dopants would mainly occupy the sites of lead vacancies resulted from Pb volatilization. And irradiation changes the chemical valence of Bi element,which is Bi 3+→Bi 5+.The Bi 5+ will replace the lattice W 6+ ions and it will cause some (WO 4) 2- replaced by (BiO 3+V O) -.

【基金】 国家自然科学基金 ( 197740 43) ;高等学校优秀青年教师教学科研奖励计划;上海市教育委员会重点学科研究项目;曙光计划 (02SG19);青年教师项目 ( 0 1QN18)资助~~
  • 【文献出处】 高能物理与核物理 ,High Energy Physics and Nuclear Physics , 编辑部邮箱 ,2003年06期
  • 【分类号】O774
  • 【被引频次】1
  • 【下载频次】155
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