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氧杂质及热处理过程对Ge-Sb-Te薄膜的光学性质和晶体结构的影响
Optical and Structural Properties of Oxygen-doped and Annealed Ge-Sb-Te Thin Films
【摘要】 研究了氧掺杂Ge Sb Te磁控溅射相变薄膜在 4 0 0~ 80 0nm区域的光学常数 (n ,k) ,发现不同氧成分薄膜的光学性质有较大差别 ,经过热处理后薄膜的光学性质也发生了较大变化。由热处理前后薄膜的X射线衍射 (XRD)发现 ,经过退火处理后薄膜发生了从非晶态到晶态的相变。由薄膜内应力变化和薄膜的结构变化解释了薄膜光学性质的变化
【Abstract】 Optical properties of oxygen-doped Ge-Sb-Te thin films prepared by RF-sputtering method in the region of 400~800 nm were studied, including refractive index, extinction coefficient. The results show that optical constants of the Ge-Sb-Te-O films change with oxygen content and heat-treatment. XRD spectra of the films with different oxygen content in the as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. The effect of the strain field induced by oxygen-doping on optical properties is discussed.
【Key words】 thin films physics; Ge-Sb-Te films; oxygen-doping; optical constants; X-ray diffraction;
- 【文献出处】 中国激光 ,Chinese Journal of Lasers , 编辑部邮箱 ,2003年12期
- 【分类号】O484.4
- 【下载频次】61