【摘要】 基于ZnO压敏电阻器的电子态特征 ,界面肖特基势垒不仅对其导电性能 ,而且对其介电性能也有决定性的影响 .分析了三种可能导致电容弥散现象的机制 ,它们都与界面势垒的性状密切相关 ,给出的一些估算结果 ,与实验所得规律和数据基本符合 .依据有效媒质理论的分析 ,认为不一致的晶界势垒高度是导致低频端的电容量随频率降低反常地升高的原因之一 .更多还原

【Abstract】 Based on the characteristics of the electronic state in ZnO varistors, Schottky barrier at interface influenced the conductance properties and the dielectric properties. Three possible mechanisms of capacitance dispersion related to the behavior of the interface barrier were analyzed. The estimated results were consistent with that of the experiment. According to the analysis of an effective-medium theory, different height of grain boundary barrier was considered as one of the reasons to conduce the capacitance to rise abnormally with decreasing frequency in low frequency region.更多还原