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Y₁Ba₂Cu₃O_7-x半导体薄膜的红外热辐射响应研究

Study on IR thermal radiation response of Y₁Ba₂Cu₃O_7-x semiconductive thin film

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【Author】 LI Ran1, LIU Guixia2, LI Bingbing1, SUN Qiang3 (1. Department of Materials, Changchun University of Technology, Changchun 130012,China; 2. School of Chemical and Engineering Technology , Tianjin University, Tianjin 300072,China; chanics and Physics, Chinese Academy of Science, Changchun 130022, China) 

【机构】长春工业大学化工学院；天津大学化工学院；中国科学院长春光机与物理研究所应用光学国家重点实验室吉林长春　130012；天津　300072；吉林长春　130012；吉林长春　130022；

【摘要】采用直流磁控溅射后退火法制备了Y1Ba2Cu3O7-x/Si和Y1Ba2Cu3O7-x/ZrO2/SiO2两种半导体薄膜,对该薄膜进行了红外热辐射响应特性研究。采用X射线衍射、电阻温度系数法、喇曼散射表征手段对薄膜的显微结构进行了详细分析。结果表明,有过渡层的Y1Ba2Cu3O7-x半导体薄膜均匀性好,信噪比高,在红外波段和亚毫米波段甚至毫米波段都有良好的热辐射响应,适于制做非制冷探测器的敏感元。更多还原

【Abstract】 Y1Ba2Cu3O7-x semiconductive thin film with different buffers is manufactured by current magnetic sputtering with direct and annealing method, and their IR thermal radialization responses are studied. The microstructure of Y1Ba2Cu3O7-x thin film is analyzed by XRD and Raman spectrum. The electronic resistance temperature coefficient value and hall effect of Y1Ba2Cu3O7-x film are measured. The results show that the uniformity of the semiconductive Y1Ba2Cu3O7-x thin films with buffer layer is better and their signaltonoise ratio is higher. Y1Ba2Cu3O7-x has good speciality for its thermal radiation response in IR band and has good performance in submillimeter band, even in millimeter band. It will become new sensor elements of IR bolometer working at room temperature. 更多还原