【摘要】 用电子束蒸发反应沉积在Si(111)衬底上低温生长了立方MgZnO薄膜和高度C -轴取向的ZnO薄膜 .X 射线光电子能谱 (XPS)结果表明 ,立方MgZnO薄膜中的Mg含量比靶源中的高 .紫外光致荧光谱 (UVPL)测试显示 ,与ZnO相比MgZnO的荧光峰从 393nm蓝移至 373nm ,这可能与MgZnO的带隙变宽有关 .对ZnO薄膜的研究还发现 ,生长过程中充O2 与否对ZnO发光特性的影响显著 ,不充O2 时样品的紫外荧光峰较之充O2 条件下制得的样品发生红移更多还原

【Abstract】 Low temperature epitaxy of wurtzite ZnO and cubic MgZnO films is achieved on Si(111) by reactive electron beam evaporation. Mg content in MgZnO film is measured by X ray photoelectron spectroscopy and is larger than that in the evaporation source. Ultraviolet photoluminescence (UVPL) measurements show the emission peak of ZnO is at 393nm, while the peak of MaZnO is at 373nm. It is found that the UVPL peak of ZnO film grown under no O 2 environment is red shifted compared with that of ZnO film grown in the reaction chamber with additional O 2.更多还原