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标准温度和衬底分步清洗对GaN初始生长影响RHEED研究
Study of ECR-Plasma Cleaning of Sapphire Substrate Using RHEED
【摘要】 在经过校温的ECR PEMOCVD装置上 ,通过分析RHEED(反射高能电子衍射 )图像研究了常规清洗和ECR等离子体所产生的活性氢氮等离子体源对蓝宝石衬底进行清洗、氮化实验 ,结果表明 :经常规清洗的蓝宝石衬底的表面晶质差异很大 ;按照经验清洗 30min是不能清洗充分的 ,那么根据情况进行多步清洗就显得很重要了 ;结果表明清洗得很充分的衬底经 2 0min的氮化出来 ,而未清洗充分的衬底 2 0min或更长的时间是不能氮化出来的
【Abstract】 The normal cleaning effect and the cleaning and n it ridation effect of hydrogen and nitrogen ECR plasma for sapphire substrates were researched by analyzing RHEED image in ECR-PEMOCVD system whose temperature ha d been calibrated. The results indicated that much difference lies for surface q uality of sapphire substrate by normal cleaning; The 30-minute cleaning for som e substrates is insufficient and the multi-step cleaning is needed; Sufficientl y cleaned sapphire substrates have been nitrided for 20 minutes by ECR hydrogen and nitrogen plasma and smooth and clear nitridation layer can be obtained, whil e insufficiently cleaned ones cannot be nitrided for 20 minutes or longer time.
- 【文献出处】 红外技术 ,Infrared Technology , 编辑部邮箱 ,2003年06期
- 【分类号】TN304
- 【被引频次】8
- 【下载频次】142