【摘要】 利用剂量为 10 13 cm～ 10 16 cm- 2 ,能量为 0 .4Mev～ 1.8Mev的电子束辐照Poly -SiO2 Si结构 ,对辐照后样品进行了C -V特性曲线测试 .测试结果表明 ,高能电子束辐照Poly -SiO2 Si结构引起的MOS电容平带电压随辐照剂量、能量的增加而发生漂移 ,但其漂移量低于同一实验环境中干氧氧化生长的SiO2 Si结构更多还原

【Abstract】 The flat-band voltage of Poly-SiO 2/Si structure is investi ga ted by the high-frequency (1MHz) C-V technique after electron beam with flux fro m 10 13 cm -2 to 10 16 cm -2 and energy ranging from 0.4 Mev to1.8 Mev. It is shown that the flat-band voltage of Poly-SiO 2/Si struct ure shifts with the increasing of electron beam flux and energy, however, the sh ift of Poly-SiO 2/Si structure is much less than that of SiO 2/Si structure fo rmed by dry-oxygen at 1050° in the same experimental environment.更多还原