【摘要】 用卤素钨灯作辐射热源 ,对超薄 (1 0nm )SiO2 膜进行快速热氮化 (RTN) ,制备了SiOxNy 超薄栅介质膜 ,并制作了Al/n Si/SiOxNy/Al结构电容样品 .研究了不同样品中n型Si到快速热氮化超薄SiO2 膜的电流传输特性及其随氮化时间的变化 .结果表明 :低场时的漏电流很小 ;进入隧穿电场时 ,I E曲线遵循Fowler Nordheim (F N)规律 ;在更高的电场时 ,主要出现两种情形 ,其一是I E曲线一直遵循F N规律直至介质膜发生击穿 ,其二是I E曲线下移 ,偏离F N关系 ,直至介质膜发生击穿 .研究表明 ,I E曲线随氮化时间增加而上移 .文中对这些实验结果进行了解释更多还原

【Abstract】 By the rapid thermal nitridation (RTN) of ultra thin (10 nm) SiO 2 films, the ultra thin SiO x N y dielectric films had been prepared with tungsten halogen lamp as radiation source, and the Al/n Si/SiO x N y /Al capacitors had been fabricated too. The characteristics and their variation with nitridation time of current transportation from n Si to lamp heating rapid thermal nitridation ultra thin SiO 2 films of the capacitor samples were investigated. The results show that in the lower field region the leakage current is little. When the field is in the tunneling region, the current changes following the F N rule. When the field is more stubborn, two phenomena may occur: one is that the characteristics follow F N rule until the breakdown, and the other is that the characteristics move down and depart F N rule until the breakdown. As the RTN time increases, I E curves move up all. All these experimental results have been discussed.更多还原