【摘要】 用射频磁控溅射技术在室温Si基片上制备了厚度分别为25.0nm和60.7nm的MgF2薄膜样品,并用反射式椭偏光谱技术对薄膜的光学常数进行了测试分析。250～830nm光频范围椭偏光谱测量结果表明:随着膜厚增加,MgF2薄膜的光学常数n、k的变化范围减小,平均值增大;MgF2薄膜样品的吸收曲线k在波长λ为270nm和360nm处均出现由通过辐射产生的F心引起的吸收峰。更多还原

【Abstract】 The MgF2 films with the thicknesses of 25.0 nm and 60.7 nm were prepared by radio frequency(RF) magnetron sputtering technology at room temperature, and the optical constants of the films were analyzed by reflecting spectroscopic ellipsometry. The results show that within the range of 250～830 nm,the varying range of the optical constants n and k of the MgF2 film reduces and the average values of n and k increase as the film thickness increases. The absorption peaks at 270 nm and 360 nm in the k curves of the MgF2 films result from the F cores induced by radiation.更多还原