【摘要】 采用螺旋波等离子体增强化学气相沉积 (HWP -CVD)技术以SiH4 和N2 为反应气体沉积了氮化硅 (SiN)薄膜 ,利用傅里叶红外吸收谱 (FTIR)、紫外 -可见透射谱 (UV -VIS)等对薄膜的键合结构、光学带隙等参量进行了测量与分析 .结果表明 ,采用HWP -CVD技术能在较低的衬底温度下制备低H含量的SiN薄膜 ,所沉积的薄膜主要表现为Si -N键合结构 .适当提高N2 /SiH4 比例将有利于薄膜中H含量的降低 .更多还原

【Abstract】 Hydrogenated amorphous silicon nitride films (SiN) are deposited by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) with a gas mixture of SiH 4 and N 2. The influence of the nitrogen flux on the properties of sample films is investigated. The parameters such as bond structure, optical gap of SiN films are measured by using Fourier transform inferred (FTIR) spectroscopy and ultraviolet-visible spectroscopy (UV-VIS). It is shown that SiN films with low hydrogen content can be prepared by HWP-CVD at a higher rate and lower substrate temperature, the main bond mode in the deposited SiN films is Si-N stretching mode. The density of the sample films increases with the enhancement of the nitrogen flux. The appropriate increase of N 2 is beneficial to the remove of the H in SiN films.更多还原