【摘要】 研究了孔隙率为9.4％的SiC/55MoSi₂（其中SiC体积分数为45％,MoSi₂体积分数为55％）电热材料的微观结构和电热性能。材料中的SiC被MoSi₂包围,两种组分的连接处虽然边界清晰,但并不存在成分的突变,有一宽度小于4μm的成分过渡区。过渡区内Fe,W杂质元素富集于靠近MoSi₂的一侧。氧元素的最高含量没有处于过渡区的中间部位,而是富集于靠近MoSi₂的一侧。温度与氧化质量增量关系表明,1560℃以下材料的氧化质量增量变化很小,接近单一的MoSi₂材料。材料中SiC组分氧化所产生的CO或CO₂气体,形成细小而分散的气泡,并停留在表面氧化层中。更多还原

【Abstract】 Microstructure and electrical-heating properties of SiC/55MoSi2 (SiC 45%, MoSi2 55% , in volume) electrical-heating materials with 9.4% of porosity were studied. Results indicate that SiC particles are surround by MoSi2 in the material. Al-though the boundary of the two kinds of particles is clear, there is not a sudden change of compositions. There is a transition zone of composition in size of less than 4 μm in width. Fe and W elements in the transition zone are rich on the side of MoSi2. The highest content of oxygen is not in the middle of transition zone, but is rich on the side of MoSi2. The relationship of tem-perature and mass change shows that the increase of the mass change of oxidation is slight below 1560℃ and it approaches to the single MoSi2. CO or CO2 produced by the oxidizing of SiC composition forms fine and disperse bubbles. Those bubbles re-main in the surface oxidation layer.更多还原