【摘要】 利用固体可饱和吸收体砷化镓 (GaAs)作为被动调Q元件 ,实现了激光二极管抽运平凹腔掺钕钒酸钇(Nd∶YVO4)激光调Q运转 ,详细测量了砷化镓被动调QNd∶YVO4激光输出特性 ,获得脉宽 15ns,重复频率 4 70kHz,光束质量M2 =1.31的激光输出 ,调Q激光运转阈值为 5 0 0mW ,并数值求解了砷化镓被动调Q速率方程 ,讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系 ,理论计算结果与实验结果相一致。更多还原

【Abstract】 Passive\} \%Q \|\%switching of LD\|pumped Nd∶YVO 4 laser was demonstrated with a GaAs wafer as saturable absorbers in a plane\|concave cavity. The pulse characteristics of passive \%Q \%\|switched Nd∶YVO 4 laser with a GaAs were measured. \%Q \%\|switched pulse duration is 15 ns, pulse repetition rate is 470 kHz, beam quality M\+2 is equal to \{1.31\} and laser threshold of passive \%Q \%\|switching is 500 mW. The numerical calculations of rate equations for case of GaAs playing the role as mentioned above are performed, and passive \%Q \%\|switched mechanism and the dependency of pulse duration and pulse repetition rate on pumping rate are discussed. The calculated result was well in agreement with the experiments results.更多还原