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Visible electroluminescence from p-n junction porous Si diode with a polyaniline film contact

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【Author】 Hongjian Li Baiyun Huang Danqing YiHaoyang Cui and Jingcui PengState Key Laboratory for Powder Metallurgy;College of Materials Science and Engineering, Central South University, Changsha 410083Department of Applied Physics, Hunan University, Changsha 410082

【机构】 State Key Laboratory for Powder Metallurgy； College of Materials Science and Engineering, Central South University, Changsha 410083Department of Applied Physics, Hunan University, Changsha 410082,State Key Laboratory for Powder Metallurgy； ,College of Materials Science and Engineering, Central South University, Changsha 410083,Department of Applied Physics, Hunan University, Changsha 410082,Department of Applied Physics, Hunan University, Changsha 410082；

【摘要】 <正> We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690 nm.更多还原

【Abstract】 We have fabricated a light emitting diode using a p-type conducting polyaniline layer deposited on a n-type porous silicon (PS) layer. The contact formed between a p-type conducting polyaniline layer and a n-type PS wafer has rectified behaviour demonstrated clearly by the I-V curves. The series resistance Rs in the p-type conducting polyaniline/n-PS diode is reduced greatly and has a lower onset voltage compared with ITO/n-PS diode. The PS has an orange photoluminescence (PL) band after coating with polyaniline. Visible electroluminescence (EL) has been obtained from this junction when a forward bias is applied. The emission band is very broad extending from 600-803 nm with a peak at 690 nm.更多还原

【关键词】 junction； conducting； behaviour； porous； wafer； orange； clearly； fabrication； crystalline； incorporation；

【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2003年11期

【分类号】O484.4
【下载频次】25

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