【摘要】 通过研究不同淀积温度下铝互连薄膜的晶粒形态 ,研究晶粒的生长规律。建立理论模型描述加热过程中薄膜晶粒的行为 ,可据此进行工艺模拟 ,对 IC制造工艺进行事前评估。根据薄膜晶粒生长的机理 ,得到晶粒尺寸和温度及时间的关系。由于薄膜晶粒的生长使表面能减小 ,晶粒的平均尺寸随生长时间增大。对晶粒尺寸的观察证实晶粒大小近似对数正态分布更多还原

【Abstract】 Obvious grain growth of IC intercon nect thin film has been observed in our experiment when ploycrystalline material is heated. It is believed that the surface energy associated with grain boundar y is minimized. We describe the movement of grain boundary during the process an d establish the theoretical model involving grain size, heat temperature, and ti me, which is very important for process simulation and manufacture prediction. F rom the experiment result, we confirm that the grain size distribution for a thi n film that has undergone normal grain growth is close to lognormal distribution .更多还原