【摘要】 用分子束外延 ( MBE)技术研制出了 Al Ga N/Ga N高电子迁移率晶体管 ( HEMT)材料 ,其室温迁移率为 10 35cm2 /V· s、二维电子气浓度为 1.0× 10 13 cm - 2 ;77K迁移率为 2 6 53cm2 /V· s、二维电子气浓度为 9.6× 10 12 cm- 2 。用此材料研制了栅长为 1μm、栅宽为 80μm、源 -漏间距为 4μm的 Al Ga N/Ga N HEMT,其室温最大非本征跨导为 186 m S/mm、最大漏极饱和电流密度为 92 5m A/mm、特征频率为 18.8GH z。另外 ,还研制了具有 2 0个栅指 (总栅宽为 2 0× 80μm =1.6 mm )的大尺寸器件 ,该器件的最大漏极饱和电流为 1.33A。更多还原

【Abstract】 AlGaN/GaN high el ectron mobility transistor (HEMT) materi als are grown using a home-made molecula r beam epitaxy (MBE) system, and the ass ociated HEMTs are fabricated and charact erized. The HEMT material has a typical room and 77 K temperature mobility of 1 035 cm 2/V·s and 2 653 cm 2/V·s at a sheet electron concentration of 1.0×10 13 c m -2 and 9.6×10 12 cm -2 , respec ti vely. For the HEMTs fabricated using the material, a peak extrinsic transconduct ance of 186 mS/mm and a maximum saturati on drain-current density of 925 mA/mm ar e obtained on devices with gate length a nd width of 1 μm and 80 μm,respectively. The unit-current gain cut-off frequency f t of the devices is about 18.8 GHz. In addition, large size HEMTs with 20 f ingers are fabricated, whose maximum dra in current is about 1.33 A.更多还原