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低阻硅基厚膜聚酰亚胺上共面波导的损耗特性
Loss Performance of CPW with Thick Polyimide on Low-resistivity Si
【摘要】 制备了一种低阻硅基厚膜聚酰亚胺上的高性能共面波导传输线 ,并从理论上分析了传输线损耗的成因及其计算方法。聚酰亚胺膜厚 1 1 .5 μm的低阻硅 (0 .5 Ω·cm)上的共面波导传输线在 1 0 GHz下插入损耗为3 .5 d B/cm。然而 ,相同衬底上 ,无聚酰亚胺膜的共面波导传输线在 1 0 GHz下插入损耗为 5 0 d B/cm,损耗特性明显比前者差。测试结果表明聚酰亚胺层的介入能有效地改善传输线的损耗特性 ,且损耗随着聚酰亚胺膜厚的增加而降低。
【Abstract】 A kind of high p e rformance CPW transmission line on low r esistivity silicon covered with polyimid e is produced in this paper, and the pro creant reason and the calculation of CPW loss are analyzed theoratically. For ex ample, the attenuation at 10 GHz is 3.5 dB/cm for the CPW line with a 11.5 μm th ick polyimide on silicon (0.5 Ω·cm), whi ch is much lower than 50 dB/cm of lines made directly on the same substrate with out polyimide. The result shows that the polyimide interface layer can reduce th e loss of transmission lines effectively , moreover the thicker the polyimide is, the lower the transmission loses.
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of Solid State Electronics , 编辑部邮箱 ,2003年03期
- 【分类号】TN811
- 【被引频次】13
- 【下载频次】214