【摘要】 建立了GaN HVPE系统的流体动力学模型,研究了反应气体在反应室内的浓度场,讨论了反应室内GaCl和NH₃管道空间配置对气体在衬底表面浓度分布的影响,并对HVPE系统反应室的设计进行了优化。材料生长结果表明,厚度均匀性良好,直接在蓝宝石衬底上生长的GaN外延层摇摆曲线半宽为660 arcsec。更多还原

【Abstract】 Model of fluid dynamic for GaN HVPE system was setup, gas concentration in the reactor was simulated. Effect of GaCl and NH3 tube configuration inside the reactor on the gas concentration was discussed. Reactor configuration is optimized based on the simulation results. GaN epilayer is grown with good uniformity in thickness, the FWHM of rocking curve is 660arcsec.更多还原