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真空度对碳纳米管生长过程的影响
Study on influence of vacuum on growth of carbon nanotubes
【摘要】 利用等离子体增强热丝化学气相沉积系统在沉积有过渡层Ta和催化剂层NiFe的Si衬底上制备出准直碳纳米管,并用扫描电子显微镜研究了它们的生长和结构,结果表明真空度对其生长和结构有较大的影响。当真空度为4000Pa和2000Pa时,准直碳纳米管较容易生长,并且真空度为2000Pa时生长的碳纳米管平均长度大于真空度为4000Pa时碳纳米管的平均长度。但真空度为667Pa时碳纳米管生长困难。根据热力学和辉光放电理论,分析了真空度对准直碳纳米管生长和结构的影响。
【Abstract】 Aligned carbon nanotubes (ACNs) were prepared on Si substrates deposited with NiFe and Ta layers in plasma - enhanced hot filament chemical vapor deposition system, and ACNs growth and structure were investigated by scanning electron microscopy. The results indicate that vacuum greatly affect their growth and structure. The aligned carbon nanotubes can easily synthesized when vacuum is 4000Pa and 2000Pa, and the average length of ACNs grown at 2000Pa is larger than that grown at 4000Pa. But, it is difficult to grow carbon nanotubes at 667Pa. According to thermodynamics and glow discharge theories, effects of vacuum on the growth and structure of the aligned carbon nanotubes are analyzed.
- 【文献出处】 功能材料与器件学报 ,Journal of Functional Materials and Devices , 编辑部邮箱 ,2003年04期
- 【分类号】TQ127.11
- 【被引频次】4
- 【下载频次】90