【摘要】 提出一种新的牺牲层工艺。先将阳极氧化生成的多孔硅在300℃的氮气氛下进行退火以稳定其多孔结构,然后将其在700℃下氧化成为具有多孔结构的二氧化硅。用氧化的多孔硅材料作为牺牲层材料,既可以保留多孔硅牺牲层材料释放迅速的优点,又克服了多孔硅在释放时的局限性。实验运用氧化的多孔硅材料作牺牲层成功制备了悬空振膜和悬臂梁结构。更多还原

【Abstract】 A new MEMS technology using the oxided porous silicon as sacrificial layers was presented. The porous silicon formed by electrochemical etching in HF should be stabilized porous structure by annealing at 300℃ in nitrogen atmosphere, and then oxided to SiO2 with porous structure at 700℃ .The oxided porous silicon can be etched in HF quickly to avoid the problem of etching porous silicon. The free standing membrane and cantilever are obtained by using this technology.更多还原