【摘要】 用磁过滤真空离子溅射系统,改变加在单晶Si(100)衬底上的衬底偏压,制备不同sp3C键与sp2C键比例的碳薄膜样品。测量了2.0～5.0eV光子能量范围内各个碳薄膜样品的椭偏光谱。发现该谱与碳薄膜中的sp键比例有明显的关系。我们提出一种较简便的分析解谱方法,分析所测得的各个椭偏光谱,半定量地确定各碳薄膜样品的sp3C键与sp2C键比例。所得结果还与同类样品的拉曼光谱与吸收光谱测量结果相比较,结果基本上是一致的。研究结果表明椭偏光谱方法可以发展成一种较简便的、对样品无损伤的测定功能碳薄膜中的sp3C键成分的新方法。更多还原

【Abstract】 Amorphous carbon films on the single crystal Si (100) substrates have been prepared using a magnetic field filtered plasma stream deposition system. Various sp3 fraction samples were obtained by changing the bias voltage applied to the substrates. The ellipsometric spectra of various carbon film samples have been measured in the photon energy range of 2.0～5.0eV. It was found that the ellipsometric spectra were dependent on the sp3 fraction. We propose a simple method to analyze the measured ellipsometric spectra, and determine the sp3 fraction semiquantitatively. This result was compared with those results of similar samples measured by the Raman spectroscopy and the optical absorption spectroscopy. These three results show the same tendency. We found that the spectroscopic ellipsometry was a relatively simple, nondestructive method to determine the sp3 fraction of the carbon film.更多还原