【摘要】 首次采用二氰二胺的N,N二甲基甲酰胺(DMF)溶液做沉积液,用Si(100)和ITO导电玻璃做基底,在阴极上电化学沉积了CNx薄膜。X射线衍射(XRD)花样说明沉积的CNx薄膜为非晶结构。X射线光电子能谱(XPS)、傅立叶转换红外光谱(FTIR)分析结果表明CNx样品薄膜的N/C比为0.7左右,碳和氮主要以C—N、C=N的形式成键,有少量的碳和氮以C≡N的形式成键。电阻率测试显示,样品具有较高的电阻率,Si(100)和ITO导电玻璃基底上氮化碳薄膜的电阻率值范围分别为1011～1012Ω·cm和1012～1013Ω·cm。用Si(100)、ITO导电玻璃两种衬底,CNx薄膜的沉积速率、N含量和电阻率不同,说明衬底的选择对沉积过程和沉积膜的性能有重要影响。更多还原

【Abstract】 On ITOcoated glass substrates and Si(100) substrates, carbon nitride films were prepared by electrodeposition in which solutions of dicyandiamide and N,Ndimethlformamide were used as electrolytes for the first time. The films were characterized by Xray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy and Xray diffraction (XRD). It was evidented that carbon nitride films were amorphous, the N/C ratio was 0.72 for a typical sample. Three types of chemical bonds between nitrogen and carbon, C-N, C=N, C≡N, appeared in the films, of which C-N, C=N were dominant. Resistivity of samples was 1011 ～1012Ω·cm on Si(100) substrates, 1012～1013Ω·cm on ITOcoated glass substrates. Depositional rate, nitrogen concentration and resistivity of CNx films were different on ITOcoated glass substrate and Si(100) substrate. These results showed that selection of substrate played an important role in the electrodeposition.更多还原