【摘要】 研究了基于SOI(silicon on insulator)材料的阵列波导光栅(AWG)分波器件,给出了此器件材料色散的数值拟合公式,进而利用BPM方法研究了材料色散脊型波导结构变化和器件制做中刻蚀深度误差对波导有效折射率和波分复用模块性能的影响。结果表明,刻蚀深度误差对模块性能优劣起关键作用。更多还原

【Abstract】 The fit expression of silicononinsulator(SOI) material dispersion was deduced.The relationship between the waveguide effective index and material dispersion,change of rib structure errer of etched depth were analysed with BPM method.The results show that the error of etched depth plays key role on demultiplexier module.更多还原