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倒装焊组装的光电混合集成RCE探测器面阵
Flip Chip Assembly Hybrid Optoelectronic Integrated RCE Photo-detector Arrays
【摘要】 报道了一种可用于并行光传输系统的64×64光探测器面阵。器件结构采用谐振腔增强型(RCE),吸收区由3层InGaAs/GaAs量子阱构成,谐振腔是由2组多层布拉格结构的反射镜组成,工作波长位于980nm。该器件利用倒装焊技术,将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起,形成具备64×64路光并行接收及处理的大规模光电集成探测器面阵器件,并对光探测器面阵的主要特性进行了测试,测试结果显示该面阵具有均匀的电特性,反向偏压均大于14V,暗电流约为10nA数量级。
【Abstract】 Character of a 64×64 photodetector array which can be applied to parallel optic communication was presented.The detector is consist of a resonance and a absorber which made by three InGaAs/GaAs quantum well.And the resonance is made by two DBR.The detector operate at a wavelength of 980 nm.Flip chip bonding was used to assemble the device to a Sibased integrated circuits,which was applied to deal with the photocurrent generated by the detector and was fabricated by standard CMOS technology.Then a hybrid integrated 64×64 photodetector array was formed and the electric character test result was desired.The device has fine electric character.The reverse voltage of each unit is above 14 V and the dark current of each unit is about 10 nA.
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2003年09期
- 【分类号】TN205
- 【被引频次】3
- 【下载频次】107