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倒装焊组装的光电混合集成RCE探测器面阵

Flip Chip Assembly Hybrid Optoelectronic Integrated RCE Photo-detector Arrays

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【作者】 裴为华陈弘达邓晖毛陆虹杜云唐君梁琨吴荣汉王启明

【Author】 PEI Weihua1, CHEN Hongda1, DENG Hui1, MAO Luhong1,2, DU Yun1,TANG Jun1, LIANG Kun1, WU Ronghan1, WANG Qiming1of Semiconductors,The Chinese Academy of Sciences,Beijing 100083,China; 2.Electronic Information School,Tianjin University,Tianjin 300072,China)

【机构】 中国科学院半导体研究所集成光电子学国家重点实验室中国科学院半导体研究所集成光电子学国家重点实验室 北京100083北京100083北京100083天津大学电子与信息工程学院天津300072

【摘要】 报道了一种可用于并行光传输系统的64×64光探测器面阵。器件结构采用谐振腔增强型(RCE),吸收区由3层InGaAs/GaAs量子阱构成,谐振腔是由2组多层布拉格结构的反射镜组成,工作波长位于980nm。该器件利用倒装焊技术,将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起,形成具备64×64路光并行接收及处理的大规模光电集成探测器面阵器件,并对光探测器面阵的主要特性进行了测试,测试结果显示该面阵具有均匀的电特性,反向偏压均大于14V,暗电流约为10nA数量级。

【Abstract】 Character of a 64×64 photodetector array which can be applied to parallel optic communication was presented.The detector is consist of a resonance and a absorber which made by three InGaAs/GaAs quantum well.And the resonance is made by two DBR.The detector operate at a wavelength of 980 nm.Flip chip bonding was used to assemble the device to a Sibased integrated circuits,which was applied to deal with the photocurrent generated by the detector and was fabricated by standard CMOS technology.Then a hybrid integrated 64×64 photodetector array was formed and the electric character test result was desired.The device has fine electric character.The reverse voltage of each unit is above 14 V and the dark current of each unit is about 10 nA.

【基金】 国家自然科学重大资助项目(969896260);国家自然科学基金重点资助项目(69789802);国家"863"高技术资助项目(2001AA312080,2002AA312240,2001AA122032)
  • 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2003年09期
  • 【分类号】TN205
  • 【被引频次】3
  • 【下载频次】107
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