节点文献

碳氮纳米管薄膜及其场致电子发射特性

Carbon Nitride Nanotube Thin Film and Its Field Emission Properties

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 张兰马会中姚宁杨仕娥边超胡欢陵张兵临

【Author】 ZHANG Lan1,3, MA Huizhong1, YAO Ning2, YANG Shie2, BIAN Chao2, HU Huanling3, ZHANG Binglin2** (1.Department of Engineering Mechanics,Zhengzhou University,Zhengzhou 450002; 2.Department of Physics,Zhengzhou University,Zhengzhou 450052; 3.Anhuei Optics and Fine Mechanics Institute,Chinese Academy of Sciences,Hefei 230031,China)

【机构】 郑州大学工程力学系郑州大学物理工程学院中国科学院安徽光学精密机械研究所郑州大学物理工程学院 郑州450002合肥230031郑州450002郑州450052郑州450052

【摘要】 利用微波等离子体增强化学气相沉积技术,在玻璃衬底上600℃~650℃的低温下制备出了碳氮纳米管薄膜,氮含量为12%,采用扫描电子显微镜(SEM)、X射线光电子谱(XPS)和Raman光谱等测试手段对所制备薄膜的表面形貌、微结构和成分进行了分析,并研究了其场致电子发射特性,阈值电场为3.7V/μm。当电场为8V/μm时,电流密度为413.3μA/cm2。实验表明该薄膜具有优异的场发射性能,而且用这种方法制备的薄膜将大大简化平板显示器件的制作工艺。

【Abstract】 Carbon nitride nanotube(CNNT) thin films were prepared on NiCr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600~650 ℃.The nitrogen concentration in the film is 12 %.The microstructure of the film was examined by using SEM,XPS and Raman spectroscopy.The characteristics of field emission of CNNT thin films were measured.The turnon field of the film was 3.7 V/μm.The current density was 413.3 μA/cm2 at an electric field of 8 V/μm.The experimental results indicate that this film has a good field emission property.The film prepared by this method will simplify the fabricating process of flat panel display device..

【基金】 国家"863"计划(715 002 0042);国家自然科学基金(60278035);河南省自然科学基金(004042000)资助项目
  • 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2003年08期
  • 【分类号】TN304.05
  • 【被引频次】11
  • 【下载频次】146
节点文献中: 

本文链接的文献网络图示:

本文的引文网络