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碳氮纳米管薄膜及其场致电子发射特性
Carbon Nitride Nanotube Thin Film and Its Field Emission Properties
【摘要】 利用微波等离子体增强化学气相沉积技术,在玻璃衬底上600℃~650℃的低温下制备出了碳氮纳米管薄膜,氮含量为12%,采用扫描电子显微镜(SEM)、X射线光电子谱(XPS)和Raman光谱等测试手段对所制备薄膜的表面形貌、微结构和成分进行了分析,并研究了其场致电子发射特性,阈值电场为3.7V/μm。当电场为8V/μm时,电流密度为413.3μA/cm2。实验表明该薄膜具有优异的场发射性能,而且用这种方法制备的薄膜将大大简化平板显示器件的制作工艺。
【Abstract】 Carbon nitride nanotube(CNNT) thin films were prepared on NiCr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600~650 ℃.The nitrogen concentration in the film is 12 %.The microstructure of the film was examined by using SEM,XPS and Raman spectroscopy.The characteristics of field emission of CNNT thin films were measured.The turnon field of the film was 3.7 V/μm.The current density was 413.3 μA/cm2 at an electric field of 8 V/μm.The experimental results indicate that this film has a good field emission property.The film prepared by this method will simplify the fabricating process of flat panel display device..
【Key words】 microwave plasma enhanced chemical vapor deposition; Carbon nitride nanotube; Field electron emission;
- 【文献出处】 光电子·激光 ,Journal of Optoelectronics.laser , 编辑部邮箱 ,2003年08期
- 【分类号】TN304.05
- 【被引频次】11
- 【下载频次】146