【摘要】 用低压MOCVD生长应变InGaAs/GaAs量子阱,采用中断生长、应变缓冲层(SBL)、改变生长速度和调节Ⅴ/Ⅲ等方法改善InGaAs/GaAs量子阱的光致发光(PL)质量。PL结果表明,10s生长中断结合适当的SBL生长的量子阱PL谱较好。该量子阱应用于1.06μm激光器的制备,未镀膜的宽条激光器(100μm×1000μm)有低阈值电流密度(110A/cm2)和高的斜率效率(0.256W/A,per.facet)。更多还原

【Abstract】 Strained InGaAs/GaAs quantum Wells(QWs) were grown by lowpressure metalorganic chemical vapor deposition(MOVCD).Growth interruption and strain buffer layer(SBL) were introduced to improve the photoluminescence(PL) performance of the InGaAs/GaAs QW.1 064 nm wavelength lasers using the QW were grown and processed into devices.Broad area lasers (100 μm×1 000 μm) show low threshold current densities (110 A/cm2) and high slop efficiency (0.256 W/A,per facet).更多还原