【摘要】 采用真空蒸发沉积,在室温下制备了PTCDA/p-Si有机/无机异质结样品。对其表面用原子力显微镜(AFM)研究表明,PTCDA薄膜具有岛状形态结构。经X光电子能谱(XPS)分析表明,在PTCDA分子中,C原子有两种束缚能态,其结合能力分别为285.3eV和288.7eV;O原子与C原子相邻,一些O原子通过双键与C原子相结合,另外的O原子则通过单键与2个C原子相结合。经Ar+束溅射研究界面电子状态表明,随溅射时间增加,C1s和O1s峰逐渐减弱,而Si2p和Si2s峰渐渐增强。C1s和Si2p谱峰随着溅射时间的增加而逐渐向低束缚能力方向移动。由于荷电效应和碳硅氧烷(C-Si-O)及SiO2的存在,O1s谱峰随溅射时间的增加先向高束缚能方向移动,然后向低束缚能方向移动。更多还原

【Abstract】 The organiconinorganic(OI) semiconductor heteojunction(HJ) samples were prepared by vapordepositing 3,4,9,10perylenetetracarboxylic dianhydride(PTCDA) onto pSi substrate at the room temperature.The morphology,surface and interface electron states of the PTCDA/pSi heterojunction had been investigated using AFM and XPS technologies.The results show that the PTCDA film has a surface texture of islandlike morphology,and the undulation is about 7 nm.The XPS analysis for the HJ raw surface indicates that,in PTCDA molecule the carbon atoms have two kinds of binding energies,i.e.285.3 eV and 288.7 eV.In PTCDA some oxygen atoms bond to one carbon atom with a double bonds,and the other oxygen atoms bond to two carbon atoms with two single bonds.The interface electronic structure of the HJ was investigated by Ar+ beam sputtering.The results demonstrate that,the C1s and O1s peaks become weaker,the Si 2p and Si 2sF peaks get stronger,and the corelevels of the C1s and Si 2p spectra slightly shift towards lower binding energy with the increment of the sputtering time.Because of the charge effect and the existence of the carbosiloxane and silicon oxides,the corelevels of the O1s spectra firstly shift towards higher binding energy then shift back to low binding energy with the increasing of the sputtering time.更多还原