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硅表面有机单分子膜的新表征方法──界面微分电容测量法
A New Technique of the Characterization of Monolayers on Silicon Surfaces──Measure of the Differential Capacity of Interfaces
【摘要】 提出一种表征硅表面有机单分子膜的新方法界面微分电容测量法 .通过对新制备的 H-Si( 1 1 1 )表面和一系列烯烃分子修饰的硅表面 /电解液界面的微分电容的研究 ,建立了硅表面有机膜结构和性质与界面电容之间的联系 .实践证明这是一个简便、快速和有效的实验技术 ,为硅表面化学修饰与功能化研究提供了一个非常有力的工具 .
【Abstract】 We suggest a new technique to characterize the organic monolayers on silicon surfacesmeasurement of the differential capacity-electrode potential curve. By means of the investigation of differential capacity of a series of alkenes-modified silicon surfaces and H-Si(111)/electrolyte interfaces, we have established the relationship between the structure of the organic monolayers on silicon surfaces and their interface differential capacity. It has been confirmed to be a simple, quick, and effective experimental technique for the research of chemical modifications and functions on the silicon surfaces.
【Key words】 Monolayers on silicon surfaces; Differential capacity; Characteristic technique;
- 【文献出处】 高等学校化学学报 ,Chemical Research In Chinese Universities , 编辑部邮箱 ,2003年01期
- 【分类号】O657.1
- 【被引频次】3
- 【下载频次】307