【摘要】 通过 XPS分析了 Ti O2 薄膜的结构。薄膜是通过化学气相沉积的方法生长 ,有机源遇热发生分解 ,沉积在硅衬底上形成 Ti O2 薄膜。 XPS分析表明 :所得 Ti O2 薄膜含有 Ti、 C、 O、Al、Si元素。各元素的电子结合能与理论值并无太大的偏移 ,说明通过化学气相沉积法制备的Ti O2 薄膜 ,纯度高 ,质量好 ,晶型为锐钛矿更多还原

【Abstract】 In this paper ,the structure of TiO 2 thin films were analyzed by XPS. TiO 2 thin films were grown by chemical vapor deposition. The resource of organism was decomposed when the temperature increased and deposited on the Si substrate. XPS analysis showed that the TiO 2 thin films contained Ti, C, O, Al, Si elements. The electronic combination of each element approximated to their theories value. this showed the films synthesized by CVD with high pure degree and high quantity. The crystal type of the films was anatase.更多还原