【摘要】 研究了Si/C/N纳米晶须的制备、组成和微波介电性能。利用CVD法制备了化学组成一定的纳米Si/C/N晶须,XRD研究发现晶须的物相主要为β-SiC。热重分析表明该晶须在700℃以上开始氧化,具有较好的抗氧化性。测定了Si/C/N晶须的复介电常数与作用频率的关系,并计算了介电损耗角正切。依据介电性能数据,分别设计了单层和双层吸波材料,对所设计材料的吸波性能进行了计算。对Si/C/N纳米晶须的吸波机理进行了初步的探讨。更多还原

【Abstract】 Si/C/N nano whisker with certain composition was prepared by Chemical Vapor Depo sition (CVD). The phase of the whisker was determined as β -SiC by XRD. TG analysis indicated that the whisker can resist oxidation up to 700 ℃. Depende nce of the dielectric constant and loss tangent on the frequency was investigate d. Based on the dielectric constant, mono and double layer absorber materials were designed , and the absorber property of the designed materials was estimated. The mech anism of microwave depletion by Si/C/N nano whisker was discussed, which is due to the dopant of nitrogen atoms in SiC lattice.更多还原