节点文献
GaAs/InGaAs量子点应变场的TEM研究
Study of strain field in GaAs/InGaAs quantum dots by transmission electron microscopy
【摘要】 运用透射电子显微术(TEM)对由分子束外延(MBE)制备的GaAs InGaAs多层量子点样品进行观察和分析。利用对量子点周围应变场分布的模拟,定性解释了量子点形貌及其周围发现的凹陷区域。通过对量子点高分辨像显示的晶格错配和化学成分分析研究,解释了所研究样品中量子点尺寸逐层增大的现象。研究结果为量子点材料生长过程中应变场的控制提供了一些思路。
【Abstract】 GaAs/InGaAs quantum dots grown by molecular beam epitaxy (MBE) were studied. Trenches were found at the bottom of quantum dots in the specimens, it was attributed to abnormal strain distribution by the simulation of strain field around one quantum dot. The analysis on the lattice mismatch, chemical composition distribution and interplanar spacing of {111} in the specimens by analytical electron microscopy has been carried out. And related with the amount of indium in each layer and the thickness of spacer layer, a size increasing of the quantum dot along the growth direction was explained.
【Key words】 quantum dot; transmission electron microscopy; strain field; GaAs/InGaAs;
- 【文献出处】 电子显微学报 ,Journal of Chinese Electron Microscopy Society , 编辑部邮箱 ,2003年05期
- 【分类号】O472
- 【被引频次】2
- 【下载频次】136