【摘要】 本文在考虑了晶体管的小注入效应和大注入效应以及基区宽变效应等因素后 ,首次用近似和简化的数学表示式和相应的等效电路 ,描述了光电双基区晶体管 (PDUBAT)负阻形成的机理并使负阻区和谷值区的理论计算和实验结果一致性很好更多还原

【Abstract】 By adopting the approximate and simplified mathematical expressions and the relative equivalent circuit for the first time in consideration of the low injection effect,the high injection effect and the early effect etc.of the transistor,the mechanism for the origin of the negative resistance in photoelectric dual base transistor (PDUBAT) has been described.The theoretical calculation is well consistent with experimental results in the negative resistance region and the valley region.更多还原