【摘要】 采用了补氧直流磁控反应溅射工艺制备ITO膜,在不同基片加热温度和补氧流量下获得最低方块电阻值的最佳制备工艺。对制备的ITO薄膜进行了退火热处理,研究不同温度热处理后膜的方块阻值的变化。实验表明,对一定的基片加热温度,ITO膜的方块电阻与溅射气氛中的补氧流量有关,并存在一个最佳补氧的值,在该条件下制备ITO的方块电阻最小,在膜厚为40nm埃时仅有不到100Ω/□。影响溅射沉积ITO透明导电薄膜方阻的,除了溅射沉积时基片的烘烤温度和补氧流量外,还包括后期大气退火热处理的温度。更多还原

【Abstract】 ITO films were fabricated by oxygen-suppling DC magnetism reactive sputtering technology. Optimal fabricating technology including heating temperature of substrate and oxygen supplying flow was found to obtain minimum square resistance value. A serial of ITO films fabricated by optimal technologies were annealed to study the variation of square resistance value of films after heat treatments on different temperatures. Experimental results showed that, under certain heating temperature of substrate, square resistances value of ITO films were related to oxygen supplying flow during sputtering. An Optimal position existed under which ITO films had a minimum square resistance value less than 100Ω/□ with the film thickness of 400 nm. As well as heating temperature of substrate and oxygen supplying flow, temperature during post atmospheric anneal treatment had influence on square resistance value of sputtered ITO films.更多还原