【摘要】 以Spice电路模拟的IGBT(绝缘栅双极晶体管 )等效电路优化模型 ,用压控电阻 (VCR)等效IGBT的宽基区电导调制效应取得了很好的效果。基于器件的参数实测值 ,通过物理方程式 ,精确推导出器件的主要原始设计参数。用Spice的LEVEL 8模型 ,以确保模型的精确性和收敛性 ,从而获得模拟与实验很好符合的结果更多还原

【Abstract】 A subcircuit based model for the Insulated Gate Bipolar Transistor(IGBT) is proposed and optimized.The IGBT wide base conductivity modulated resistor is effectively equivalent by using a Voltage Controlled Resistor(VCR). Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without devices destruction. Employing the MOS IEVEL 8 spice model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence.The simulation results are verified by comparison with measurement results.更多还原