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CeO2掺杂对Nb-TiO2系压敏陶瓷电性能的影响
The Effect of CeO2 Doping on the Electrical Properties of Nb-TiO2 Based Varistor Ceramics
【摘要】 在x(CeO2)为0~1.5%的范围内改变其掺杂浓度,研究了CeO2添加剂对TiO2压敏陶瓷电性能的影响。电性能测量和扫描电镜观察的结果表明:在Nb-TiO2系压敏陶瓷中,CeO2的主要作用是促使微观结构的均匀化,与Ti、Si固溶形成第二相,提高非线性,同时第二相的浓度对压敏电压的高低起着决定性作用。当x(CeO2)为0.4%时,可以得到晶粒大小均匀,瓷体结构致密,压敏电压约为15 V/mm及其它综合指标优良的低压压敏电阻。
【Abstract】 The effect of CeO2 doping (0~1.5 mol%) on the electrical properties of Nb-TiO2 based varistor ceramics was investigated. The measurement and SEM observation show that the introduction of CeO2 makes the microstructure more homogenous of the Nb-TiO2 ceramic system. A second phase composed of Ce, Ti and Si has been found, which strongly influence nonlinear property. A uniform grain distribution and a lower varistor voltage of 15 V/mm are obtained when the doped CeO2 is 0.4 mol%.
- 【文献出处】 电子元件与材料 ,Electronic Components $ Materials , 编辑部邮箱 ,2003年07期
- 【分类号】TM54
- 【被引频次】9
- 【下载频次】138