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提高发光二极管(LED)外量子效率的途径
Enhancement of the External Quantum Efficiency of Light-emitting-diodes
【摘要】 发光二极管的内量子效率与外量子效率之间存在巨大的差距,主要介绍了提高发光二极管(LED)外量子效率的几种途径,包括生长分布布喇格反射层(DBR)技术,将射向衬底的光反射回表面;制作透明衬底(TS)取代原有的GaAs衬底;改变LED几何外形来缩短光在LED内部反射的路程以及限制全反射现象的表面粗化技术。对比了每种方法的发展过程及效率。
【Abstract】 Of Light-emitting diodes (LED), the internal efficiency is quite different from the external efficiency. Several approaches to enhance the external quantum efficiency of LED are discussed and compared. With Distributed Bragg Reflector (DBR) technology, light on the substrates will be reflected back to surfaces. Transparent substrates can be used to take place of GaAs substrates. Reflection distance in the LED can be shortened by changing the geometry of LED. Surface Texture Technology can be used to limit total reflection.
- 【文献出处】 电子元件与材料 ,Electronic Components $ Materials , 编辑部邮箱 ,2003年04期
- 【分类号】TN312.8
- 【被引频次】34
- 【下载频次】1026