【摘要】 研究了电化学沉积参数对电沉积GaAs薄膜中元素组分以及薄膜质量的影响,得出电化学沉积GaAs薄膜成分接近Ga1As1的最佳工艺条件:pH=1.2;浓度比c(Ga) / c(As)=14;电流密度J=0.006~0.008 A/cm2;阴极材料用SnO2导电玻璃,其SnO2厚度>1mm。并给出改善GaAs薄膜质量的途径,为生产高效、低成本的GaAs太阳能电池奠定基础。更多还原

【Abstract】 The effect of electrochemical deposition parameters on composition and quality of GaAs film was investigated. The optimum technology conditions for GaAs close to Ga1As1 and the approaches to improve the film quality have obtained. The conditions are pH=1.2, c(Ga) / c(As)=14, J=0.006~0.008 A/cm2, with SnO2 conductive glass as cathode material. This makes it possible to prepare GaAs film for solar cells in higher efficiency and lower cost.更多还原