【摘要】 在InP(001)基衬底上用分子束外延方法生长InAs纳米结构材料,通过衬底的旋转与否及混合生长模式,得到了两种InAs量子点和量子线,并研究了量子点、线的光学性质。结果表明,两种方式都可生长出较强发光的量子点(线);由量子点排列构成的量子线的光致发光光谱呈现出多峰结构,分析和理论计算表明这是InAs量子线上各量子点在垂直方向上不同高度分布和非连续性而造成的。更多还原

【Abstract】 InAs nano-structure material grew on the InP(OOl) substrate by molecular beam epitaxy. InAs quantum dots and quantum nano-wires were obtained and their properties of photolumi-nescence were studied by varying the growing condition of InAs epitaxial layer, respectively. The results showed that the spectra of InAs quantum wires had multi-peaks structure. Theoretical calculation indicates that the multi-peaks structure was caused by the discontinuity and different height distribution along the vertical direction of InAs quantum dots.更多还原